to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors MPSA27 transistor (npn) features z high current z low voltage z high dc current gain maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter breakdown voltage v (br)ces i c =0.1ma,v be =0 60 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 10 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a collector cut-off current i ces v ce =50v,i e =0 0.5 a emitter cut-off current i ebo v eb =10v,i c =0 0.1 a h fe(1) * v ce =5v, i c =10ma 10000 dc current gain h fe(2) * v ce =5v, i c =100ma 10000 collector-emitter saturation voltage v ce(sat) * i c =100ma,i b =0.1ma 1.5 v base-emitter voltage v be * v ce =5v,i c =100ma 2.0 v transition frequency f t v ce =5v,i c =10ma,f=100mhz 125 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage 60 v v ces collector-emitter voltage 60 v v ebo emitter-base voltage 10 v i c collector current 0.8 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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